DATA SHEET
SILICON
TRANSISTORS
2SC3623, 3623A
NPN SILICON EPITAXIAL
TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND SWITCHING
FEATURES • High hFE:
hFE = 1000 to 3200 @VCE = 5.
0 V, IC = 1.
0 mA • Low VCE(sat):
VCE(sat) = 0.
07 V TYP.
@IC/IB = 50 mA/5.
0 mA • High VEBO:
VEBO: 12 V (2SC3623) VEBO: 15 V (2SC3623A)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Total power dissipation Junction temperature Storage temperature
Symbol
VCBO VCEO VEBO IC(DC) PT
Tj Tstg
Ratings 2SC3623 2SC3623A
60 50 12 15 150 250 150 −55 to +150
Unit
V V V mA mW °C °C
PACKAGE DRAWING (UNIT: mm)
Electrode connect...