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2SC3622A

NEC
Part Number 2SC3622A
Manufacturer NEC
Description NPN SILICON EPITAXIAL TRANSISTOR
Published Dec 26, 2008
Detailed Description DATA SHEET SILICON TRANSISTORS 2SC3622, 3622A NPN SILICON EPITAXIAL TRANSISTOR FOR LOW–FREQUENCY POWER AMPLIFIERS AND ...
Datasheet PDF File 2SC3622A PDF File

2SC3622A
2SC3622A

Overview
DATA SHEET SILICON TRANSISTORS 2SC3622, 3622A NPN SILICON EPITAXIAL TRANSISTOR FOR LOW–FREQUENCY POWER AMPLIFIERS AND SWITCHING FEATURES www.
DataSheet4U.
com PACKAGE DRAWING (UNIT: mm) • High hFE: hFE = 1000 to 3200 @VCE = 5.
0 V, IC = 1.
0 mA VCE(sat) = 0.
07 V TYP.
@IC/IB = 50 mA/5.
0 mA • Low VCE(sat): • High VEBO: VEBO: 12 V (2SC3622) VEBO: 15 V (2SC3622A) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) PT Tj Tstg 12 150 250 150 −55 to +150 Ratings 2SC3622 2SC3622A 60 50 15 Unit V V V mA mW °C °C ELECTRICAL CHARACTERISTICS (Ta = 25°C) Parameter Collector cutoff current Emitter cutoff current DC current gain DC current gain DC base voltage Collector saturation voltage Base saturation voltage Gain bandwidth product Output capacitance Turn-on time Storage temperature Fall time Symbol ICBO I...


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