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Part Number
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ICE10N60 |
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Manufacturer
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Icemos |
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Description
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N-Channel Enhancement Mode MOSFET |
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Published
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Jan 18, 2015 |
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Detailed Description
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ICE10N60
N-Channel Enhancement Mode MOSFET
Features:
r Low DS(on)
Ultra Low Gate Charge High dv/dt Capability High...
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Datasheet
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ICE10N60
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Overview
ICE10N60
N-Channel Enhancement Mode MOSFET
Features:
r Low DS(on)
Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance Power Systems Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified
Product Summary
ID V(BR)DSS rDS(ON)
Qg
TA = 25°C ID = 250uA VGS = 10V VDS = 480V
10A 600V 0.
28Ω 41nC
Pin Description:
TO-220
G
Max Min Typ Typ
D
S
Symbol Parameter
Value
Unit Conditions
ID
ID, pulse EAS IAR
dv/dt
Continous Drain Current
Pulsed Drain Current Avalanche Energy, Single Pulse Avalanche Current, Repetitive MOSFET dv/dt Rugge...
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