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ICE10N73

Micross Components
Part Number ICE10N73
Manufacturer Micross Components
Description N-Channel Enhancement Mode MOSFET
Published Jan 18, 2015
Detailed Description ICE10N73 N-Channel Enhancement Mode MOSFET Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High...
Datasheet PDF File ICE10N73 PDF File

ICE10N73
ICE10N73

Overview
ICE10N73 N-Channel Enhancement Mode MOSFET Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance Power Systems Product Summary ID V(BR)DSS rDS(ON) Qg TA = 25°C ID = 250uA VGS = 10V VDS = 480V 10A 730V 0.
25Ω 82nC Pin Description: TO-220 G Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified Symbol Parameter Value Unit Conditions ID ID, pulse EAS IAR dv/dt Continous Drain Current Pulsed Drain Current Avalanche Energy, Single Pulse Avalanche Current, Repetitive MOSFET dv/dt Ruggedness VGS Ptot Tj, Tstg Gate Source Voltage Power Dissipation Operating and Storage Temperature Mounting Torque 10 35 280 7.
5 50 ±20 ±30 208 -55 to +150 60 A A mJ A V/ns V W °C Ncm TC = 25°C TC = 25°C ID = 7.
5A Limited by Tjmax VDS = 480V, ID = 10A, Tj = 125°C Static AC (f>Hz) TC = 25°C M 3 & 3.
5 screws Max Min Typ Typ D S Symbol Parameter Values Min Typ Max Unit Conditions Thermal Characteristics RthJC Thermal Resistance, Junction to Case - - 0.
6 RthJA Thermal Resistance, Junction to Ambient - - 62 Tsold Soldering Temperature, Wave Soldering Only Al- - - 260 lowed At Leads Electrical Characteristics @ Tj = 25°C, Unless Otherwise Specified Static Characteristics V(BR)DSS VGS(th) IDSS Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current 730 760 2.
5 3 - 0.
5 - 20 3.
5 5 - IGSS RDS(on) Gate Source Leakage Current Drain to Source On-State Resistance - - 100 - 0.
25 0.
35 - 0.
7 - RGS Gate Resistance -4- °C/W °C Leaded 1.
6mm (0.
063in.
) from Case for 10s V VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA µA VDS = 730V, VGS = 0V, Tj = 25°C VDS = 730V, VGS = 0V, Tj = 150°C nA VGS = ±20v, VDS = 0V Ω VGS = 10V, ID = 5A, Tj = 25°C VGS = 10V, ID = 5A, Tj = 150°C Ω f = 1 MHz, open drain Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1...


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