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ICE10N73

Icemos
Part Number ICE10N73
Manufacturer Icemos
Description N-Channel Enhancement Mode MOSFET
Published Jan 18, 2015
Detailed Description Preliminary Data Sheet ICE10N73 ICE10N73 N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Char...
Datasheet PDF File ICE10N73 PDF File

ICE10N73
ICE10N73

Overview
Preliminary Data Sheet ICE10N73 ICE10N73 N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability • Increased transconductance performance • Optimized design for high performance power systems ID V(BR)DSS rDS(on) Qg Product Summary TA=25oC ID=250uA VGS=10V VDS=480V 10A 730V 0.
25Ω 82nC D Max Min Typ Typ G S T0220 ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR SUPERJUNCTION MOSFETS.
THE MAJORITY OF THESE PATENTS HAVE 17 to 20 YEARS OF REMAINING LIFE.
THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
Standard Metal Heatsink 1=Gate, 2=Drain, 3=Source.
Maximum ratings b , at Tj=25oC, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current Avalanche energy, single pulse ID ID, pulse E AS Tc=25oC Tc=25oC ID=7.
5A Avalanche current, repetiti...


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