2SJ297(L), 2SJ297(S)
Silicon P-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching
regulator, DC-DC converter • Avalanche ratings
Outline
LDPAK
4
123 D G
S
4
12 3
1.
Gate 2.
Drain 3.
Source 4.
Drain
November 1996
2SJ297(L), 2SJ297(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes 1.
PW ≤ 10 µs, duty cycle ≤ 1%
2.
Valu...