DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
2SK2826
SWITCHING N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION This product is N-Channel MOS Field Effect
Transistor designed for high current switching applications.
FEATURES • Super Low On-State Resistance
RDS(on)1 = 6.
5 mΩ (MAX.
) (VGS = 10 V, ID = 35 A) RDS(on)2 = 9.
7 mΩ (MAX.
) (VGS = 4.
0 V, ID = 35 A) • Low Ciss : Ciss = 7200 pF (TYP.
) • Built-in Gate Protection Diode
ORDERING INFORMATION PART NUMBER 2SK2826 2SK2826-S 2SK2826-ZJ
PACKAGE TO-220AB
TO-262 TO-263
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS(AC)
Gate to Source Voltage (VDS = 0 V)
VGSS(DC)
Drain Cur...