DatasheetsPDF.com

IRFZ44N


Part Number IRFZ44N
Manufacturer INCHANGE
Title N-Channel MOSFET Transistor
Description ·Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularl...
Features
·Drain Current
  –ID=49A@ TC=25℃
·Drain Source Voltage- : VDSS= 55V(Min)
·Static Drain-Source On-Resistance : RDS(on) = 0.032Ω(Max)
·Fast Switching DESCRIPTION
·Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are partic...

File Size 150.41KB
Datasheet IRFZ44N PDF File






Similar Datasheet

IRFZ44 : .

IRFZ44 : $GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175° C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 60V ♦ Lower RDS(ON): 0.020Ω (Typ.) www.DataSheet4U.com IRFZ44 BVDSS = 60 V RDS(on) = 0.024Ω ID = 50 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche E.

IRFZ44 : Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universially preferred for commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package Lead (Pb)-free Lead (Pb)-free and halogen-free TO-220AB IRFZ44PbF IRFZ44PbF-BE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current Pul.

IRFZ44 : The IRFZ44 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM. Features ● VDS=60V;ID=45A@ VGS=10V; RDS(ON)7.5mΩ @ VGS=10V ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply G DS TO-251 Top View Schematic Diagram VDSS = 60 V IDSS = 45 A RDS(ON) = 6.0 mΩ Table 1. Absolute Maximum Ratings (TA=25℃) Symbol Parameter VDS Drain-Source Voltage (VGS=0V) VGS Gate-Source Voltage (VDS=0V) ID (DC) Drain Current (DC) at Tc=25℃ ID (DC) IDM (pluse) Drain Current (DC) at Tc=100℃ Drain Current-Continuous@.

IRFZ44A :      )($785(6 Qýýý$YDODQFKHýý5XJJHGýý7HFKQRORJ\ Qýýý5XJJHGýý*DWHýý2[LGHýý7HFKQRORJ\ý Qýýý/RZHUýý,QSXWýý&DSDFLWDQFH Qýýý,PSURYHGýý*DWHýý&KDUJH Qýýý([WHQGHGýý6DIHýý2SHUDWLQJýý$UHD Qýýýìæèýý2SHUDWLQJýý7HPSHUDWXUH Qýýý/RZHUýý/HDNDJHýý&XUUHQWýýãýýìíýP$ýõ0D[ïôýý#ýý9'6ý ýçí9 Qýýý/RZHUýý5'6õ21ôýýãýýíïíëíý:ýõ7\Sïô $EVROXWHýý0D[LPXPýý5DWLQJV 6\PERO 9'66 ,' ,'0 9*6 ($6 ,$5 ($5 GYîGW 3' 7-ýýñý767* 7/ &KDUDFWHULVWLF 'UDLQðWRð6RXUFHý9ROWDJH &RQWLQXRXVýý'UDLQýý&XUUHQWýýõ7& ëèR&ô &RQWLQXRXVýý'UDLQýý&XUUHQWýýõ7& ìííR&ô 'UDLQýý&XUUHQWð3XOVHGýýýýýýýýýýýýýýýýýýýýýýýýýýýýýý 2ì *DWHðWRð6RXUFHýý9ROWDJH 6LQJOHýý3XOVHGýý$YDODQFKHýý(QHUJ\ýýýýýýýýýý 2ë $YDODQFKHýý&XUUHQ.

IRFZ44CN : ·Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VDSS VGS ID IDM PD TJ Tstg PARAMETER Drain-Source Voltage Gate-Source Voltage-Continuous Drain Current-Continuous Drain Current-Single Pluse (tp≤10μs) Total Dissipation @TC=25℃ Max. Operating Junction Temperature Storage Temperature VALUE 55 ±20 49 160 94 175 -55~175 UNIT V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PAR.

IRFZ44E : Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220AB Absolute Maximum Ratings Parameter .

IRFZ44E : isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFZ44E, IIRFZ44E ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤23mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 48 IDM Drain Current-Single Pulsed 192 PD Total Dissipation @TC=25℃ 110 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL C.

IRFZ44EL : Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistanc.

IRFZ44ELPBF : Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistanc.

IRFZ44EPBF : Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220AB Absolute Maximum Ratings Parameter .

IRFZ44ES : Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistanc.

IRFZ44ES : isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263(D2PAK) packaging ·Uninterruptible power supply ·High speed switching ·Hard switched and high frequency circuits ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·Switching applications INCHANGE Semiconductor IRFZ44ES ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±20 48 34 192 PD Total Dissipation 110 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARA.

IRFZ44ESPBF : Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistanc.

IRFZ44L : Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistanc.

IRFZ44L : Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extermely efficient reliabel deviece for use in a wide variety of applications. The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to.

IRFZ44N : Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings ID @ TC = 25°.




Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)