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IPD50N06S3L-08

Part Number IPD50N06S3L-08
Manufacturer Infineon
Description Power Transistor
Published Apr 14, 2015
Detailed Description IPD50N06S3L-08 OptiMOS®-T Power-Transistor Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 ...
Datasheet IPD50N06S3L-08





Overview
IPD50N06S3L-08 OptiMOS®-T Power-Transistor Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested Product Summary V DS R DS(on),max ID 55 V 7.8 mΩ 50 A PG-TO252-3-11 Type IPD50N06S3L-08 Package Marking PG-TO252-3-11 3N06L08 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse2) E AS I D=25 A Avalanche current, single pulse I A...






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