DatasheetsPDF.com

IPD50N06S3L-06

Infineon
Part Number IPD50N06S3L-06
Manufacturer Infineon
Description Power Transistor
Published Apr 14, 2015
Detailed Description IPD50N06S3L-06 OptiMOS®-T Power-Transistor Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 ...
Datasheet PDF File IPD50N06S3L-06 PDF File

IPD50N06S3L-06
IPD50N06S3L-06

Overview
IPD50N06S3L-06 OptiMOS®-T Power-Transistor Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested Product Summary V DS R DS(on),max ID 55 V 6.
0 mΩ 50 A PG-TO252-3-11 Type IPD50N06S3L-06 Package Marking PG-TO252-3-11 3N06L06 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse2) E AS I D=25 A Avalanche current, single pulse I AS Gate source voltage3) V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 Value 50 50 200 710 50 ±16 136 -55 .
.
.
+175 55/175/56 Unit A mJ A V W °C Rev.
1.
2 page 1 2009-05-20 IPD50N06S3L-06 Parameter Symbol Condition...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)