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IPD50N06S3L-13

Infineon
Part Number IPD50N06S3L-13
Manufacturer Infineon
Description Power Transistor
Published Apr 14, 2015
Detailed Description OptiMOS®-T Power-Transistor Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1...
Datasheet PDF File IPD50N06S3L-13 PDF File

IPD50N06S3L-13
IPD50N06S3L-13

Overview
OptiMOS®-T Power-Transistor Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested IPD50N06S3L-13 Product Summary V DS R DS(on),max ID 55 V 13 mΩ 50 A PG-TO252-3-11 Type IPD50N06S3L-13 Package Marking PG-TO252-3-11 3N06L13 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse I D,pulse E AS I AS T C=25 °C I D=25 A Gate source voltage3...


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