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Part Number
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HY1906B |
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Manufacturer
|
HOOYI |
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Description
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N-Channel Enhancement Mode MOSFET |
|
Published
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May 5, 2015 |
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Detailed Description
|
HY1906P/B
N-Channel Enhancement Mode MOSFET
Features
• 60V / 120 A ,
RDS(ON)= 6.0
mΩ
(typ.) @ V =10V GS
• Avalanc...
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|
Datasheet
|
HY1906B
|
Overview
HY1906P/B
N-Channel Enhancement Mode MOSFET
Features
• 60V / 120 A ,
RDS(ON)= 6.
0
mΩ
(typ.
) @ V =10V GS
• Avalanche Rated
• Reliable and Rugged
• Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
DS G TO-220FB-3L
DS G TO-263-2L
Applications
• Power Management for Inverter Systems.
D
G N-Channel MOSFET
Ordering and Marking Information
S
PB HY1906 HY1906
YYÿ XXXJWW G YYÿ XXXJWW G
Package Code P : TO-220FB-3L
Date Code YYXXX WW
B: TO-263-2L
Assembly Material G : Lead Free Device
Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS.
HOOYI lead-free p...
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