2SB1067
TOSHIBA
Transistor Silicon
PNP Epitaxial Type (Darlington Power
Transistor)
2SB1067
Micro-Moter Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications
Industrial Applications Unit: mm
• High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −1 A) • Low saturation voltage: VCE (sat) = −1.
5 V (max)
(IC = −1 A, IB = −1 mA)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
VCBO VCEO VEBO
IC IB
PC
Tj Tstg
−80 −80 −8 −2 −0.
5 ...