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B1015A

Toshiba Semiconductor
Part Number B1015A
Manufacturer Toshiba Semiconductor
Description 2SB1015A
Published May 31, 2015
Detailed Description TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1015A 2SB1015A Audio Frequency Power Amplifier Applications · ...
Datasheet PDF File B1015A PDF File

B1015A
B1015A


Overview
TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1015A 2SB1015A Audio Frequency Power Amplifier Applications · Low collector saturation voltage: VCE (sat) = −1.
7 V (max) (IC = −3 A, IB = −0.
3 A) · Collector power dissipation: PC = 25 W (Tc = 25°C) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating -60 -60 -7 -3 -0.
5 2.
0 25 150 -55~150 Unit V V V A A W °C °C Unit: mm JEDEC ― JEITA SC-67 TOSHIBA 2-10R1A Weight: 1.
7 g (typ.
) 1 2003-02-04 2SB1015A Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol Test Condition ICBO VCB = -60 V, IE = 0 IEBO VEB = -7 V, IC = 0 V (BR) CEO IC = -50 mA, IB = 0 hFE (1) (Note) VCE = -5 V, IC = -0.
5 A hFE (2) VCE (sat) VBE fT Cob VCE = -5 V, IC = -3 A IC = -3 A, IB = -0.
3 A VCE = -5 A, IC = -0.
5 A VCE = -5 V, IC = -0.
5 A VCB = -10 V, IE = 0, f = 1 MHz Min Typ.
Max Unit ¾ ¾ -100 mA ¾ ¾ -100 mA -60 ¾ ¾ V 60 ¾ 200 20 ¾ ¾ ¾ -0.
5 -1.
7 V ¾ -0.
7 -1.
0 V ¾ 9 ¾ MHz ¾ 150 ¾ pF Turn-on time ton 20 ms Input IB1 Output ¾ 0.
4 ¾ IB1 IB2 15 9 Switching time Storage time Fall time tstg IB2 VCC = -30 V tf -IB1 = IB2 = 0.
2 A, duty cycle <= 1% ¾ 1.
7 ¾ ms ¾ 0.
5 ¾ Note: hFE (1) classification O: 60~120, Y: 100~200 Marking B1015A hFE classification (O/Y) Product No.
Lot No.
Explanation of Lot No.
Month of manufacture (January to December are denoted by letters A to L respectively.
) Year of manufacture (Last decimal digit of the year of manufacture) 2 2003-02-04 Collector current IC (A) IC – VCE -4 Common emitter Tc = 25°C -80 -70 -60 -3 -...



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