Part Number
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HFD2N60 |
Manufacturer
|
SemiHow |
Description
|
N-Channel MOSFET |
Published
|
Jun 7, 2015 |
Detailed Description
|
HFD2N60_HFU2N60
July 2005
HFD2N60 / HFU2N60
600V N-Channel MOSFET
BVDSS = 600 V RDS(on) typ ȍ ID = 1.8 A
FEATU...
|
Datasheet
|
HFD2N60
|
Overview
HFD2N60_HFU2N60
July 2005
HFD2N60 / HFU2N60
600V N-Channel MOSFET
BVDSS = 600 V RDS(on) typ ȍ ID = 1.
8 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 9.
0 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) ȍ7\S#9GS=10V 100% Avalanche Tested
D-PAK I-PAK
2
1 3
HFD2N60
1
2 3
HFU2N60
1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (T...
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