Part Number
|
HFP10N60 |
Manufacturer
|
SemiHow |
Description
|
N-Channel MOSFET |
Published
|
Jun 7, 2015 |
Detailed Description
|
HFP10N60
HFP10N60
600V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robu...
|
Datasheet
|
HFP10N60
|
Overview
HFP10N60
HFP10N60
600V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) : 0.
64 Ω (Typ.
) @VGS=10V
Nov 2005
BVDSS = 600 V RDS(on) typ = 0.
64 Ω ID = 9.
5 A
TO-220
1 2 3
1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
– Pulsed
(Note 1)
Gate-Source Voltag...
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