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HFP10N65S

SemiHow
Part Number HFP10N65S
Manufacturer SemiHow
Description N-Channel MOSFET
Published Jun 7, 2015
Detailed Description HFP10N65S March 2014 HFP10N65S 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ ȍ ID = 9.5 A FEATURES ƒ Origina...
Datasheet PDF File HFP10N65S PDF File

HFP10N65S
HFP10N65S

Overview
HFP10N65S March 2014 HFP10N65S 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ ȍ ID = 9.
5 A FEATURES ƒ Originative New Design ƒ Superior Avalanche Rugged Technology ƒ Robust Gate Oxide Technology ƒ Very Low Intrinsic Capacitances ƒ Excellent Switching Characteristics ƒ Unrivalled Gate Charge : 29 nC (Typ.
) ƒ Extended Safe Operating Area ƒ Lower RDS(ON) ȍ 7\S #9GS=10V ƒ 100% Avalanche Tested TO-220 1 2 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25ఁ͚͑ – Continuous (TC = 100ఁ͚͑ – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 650 9.
5 5.
7 38 ρ30 700 9.
2 15.
6 4.
5 PD TJ, TSTG TL Power Dissipation (TC = 25ଇ) - Derate above 25ଇ Operating and Sto...


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