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Part Number
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HFP10N60S |
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Manufacturer
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SemiHow |
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Description
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N-Channel MOSFET |
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Published
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Jun 7, 2015 |
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Detailed Description
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HFP10N60S
Nov 2007
HFP10N60S
600V N-Channel MOSFET
BVDSS = 600 V RDS(on) typ = 0.67 Ω ID = 9.5 A
FEATURES
q Originat...
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Datasheet
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HFP10N60S
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Overview
HFP10N60S
Nov 2007
HFP10N60S
600V N-Channel MOSFET
BVDSS = 600 V RDS(on) typ = 0.
67 Ω ID = 9.
5 A
FEATURES
q Originative New Design q Superior Avalanche Rugged Technology q Robust Gate Oxide Technology q Very Low Intrinsic Capacitances q Excellent Switching Characteristics q Unrivalled Gate Charge : 29 nC (Typ.
) q Extended Safe Operating Area q Lower RDS(ON) : 0.
67 Ω (Typ.
) @VGS=10V q 100% Avalanche Tested
TO-220
1 2 3
1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25℃) – Continuous (TC = 100℃)
– Pulsed
...
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