2SC3474
TOSHIBA
Transistor Silicon
NPN Epitaxial Type
2SC3474
Switching Applications Solenoid Drive Applications
Industrial Applications Unit: mm
· High DC current gain: hFE = 500 (min) (IC = 400 mA) · Low saturation voltage: VCE (sat) = 0.
5 V (max) (IC = 300 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB
PC
Tj Tstg
Rating
80 80 7 2 0.
5 1.
0 20 150 −55 to 150
Unit V V V A A
W
°C °C
JEDEC
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JEITA
―
TOSHIBA
2-7B1A
Weight: 0.
36 g (typ.
)
JEDEC
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JE...