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C3421

Toshiba Semiconductor
Part Number C3421
Manufacturer Toshiba Semiconductor
Description 2SC3421
Published Aug 14, 2008
Detailed Description 2SC3421 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3421 Audio Frequency Power Amplifier Application...
Datasheet PDF File C3421 PDF File

C3421
C3421

Overview
2SC3421 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3421 Audio Frequency Power Amplifier Applications Unit: mm • • • Complementary to 2SA1358 Suitable for driver of 60 to 80 watts audio amplifier High breakdown voltage www.
DataSheet4U.
com Absolute Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 120 120 5 1 100 1.
5 10 150 −55 to 150 Unit V V V A mA W °C °C JEDEC JEITA ― ― TOSHIBA 2-8H1A Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in Weight: 0.
82 g (typ.
) temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
1 2006-11-09 2SC3421 Electrical Characteristics (Tc = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency www.
DataSheet4U.
com Collector output capacitance Symbol ICBO IEBO V (BR) CEO hFE (Note) VCE (sat) VBE fT Cob Test Condition VCB = 120 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 100 mA IC = 500 mA, IB = 50 mA VCE = 5 V, IC = 500 mA VCE = 5 V, IC = 100 mA VCB = 10 V, IE = 0, f = 1 MHz Min ― ― 120 80 ― ― ― ― Typ.
― ― ― ― 0.
30 0.
78 120 15 Max 100 100 ― 240 1.
0 1.
0 ― ― V V MHz pF Unit nA nA V Note: hFE classification O: 80 to 160, Y: 120 to 240 Mar...


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