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C3420

Toshiba
Part Number C3420
Manufacturer Toshiba
Description 2SC3420
Published Mar 31, 2009
Detailed Description 2SC3420 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3420 Strobe Flash Applications Audio Power Ampli...
Datasheet PDF File C3420 PDF File

C3420
C3420

Overview
2SC3420 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3420 Strobe Flash Applications Audio Power Amplifier Applications Unit: mm • • • High DC current gain : hFE = 140 to 600 (VCE = 2 V, IC = 0.
5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) Low saturation voltage: VCE (sat) = 1.
0 V (max) (IC = 4 A, IB = 0.
1 A) High collector power dissipation: PC = 10 W (Tc = 25°C), PC = 1.
5 W (Ta = 25°C) Absolute Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage DC Collector current Pulse (Note 1) Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Rating 50 40 20 8 5 8 www.
DataSheet.
co.
kr Unit V V V JEDEC A ― ― 2-8H1A JEITA TOSHIBA 1 1.
5 10 150 −55 to 150 A W °C °C Weight: 0.
82 g (typ.
) Note 1: Pulse test: Pulse width = 10 ms (max) Duty cycle = 30% (max) Note 2: Using continuously under heavy loads (e.
g.
the a...


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