Ordering number:EN1430B
NPN Epitaxial Planar Silicon
Transistor
2SC3495
High hFE, Low-Frequency General-Purpose Amplifier Applications
Applications
· AF amplifier, various driver, muting circuit.
Features
· Adoption of FBET process.
· High DC current gain (hFE=500 to 2000).
· High breakdown voltage (VCEO≥100V).
· Low collector-to-emitter saturation voltage
(VCE(sat)≤0.
5V).
· High VEBO (VEBO≥15V).
· Small Cob (Cob=1.
8pF typ).
Package Dimensions
unit:mm 2003A
[2SC3495]
JEDEC : TO-92 EIAJ : SC-43
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Cur...