TOSHIBA
Transistor Silicon
NPN Triple Diffused Type
2SC5460
Dynamic Focus Applications High-Voltage Switching Applications High-Voltage Amplifier Applications
2SC5460
Unit: mm
• High breakdown voltage: VCEO = 800 V
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 800 V
Collector-emitter voltage
VCEO 800 V
Emitter-base voltage
VEBO 5 V
Collector current
IC 50 mA
Base current
IB 25 mA
Collector power dissipation
Ta = 25°C Tc = 25°C
PC
1.
5 W
10
Junction temperature Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
JEDEC JEITA
― ―
Note 1: Using continuously under heavy loads (e.
g.
the application of high tempera...