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C5418

Panasonic Semiconductor
Part Number C5418
Manufacturer Panasonic Semiconductor
Description 2SC5418
Published Jan 20, 2017
Detailed Description Power Transistors 2SC5418 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.5±0.5 ...
Datasheet PDF File C5418 PDF File

C5418
C5418

Overview
Power Transistors 2SC5418 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.
5±0.
5 3.
0±0.
3 s Features φ3.
2±0.
1 2.
0 1.
2 10.
0 26.
5±0.
5 4.
5 q High breakdown voltage, and high reliability through the use of a 5° 5° glass passivation layer q High-speed switching 23.
4 22.
0±0.
5 q Wide area of safe operation (ASO) 5° 5° 4.
0 / s Absolute Maximum Ratings (TC=25˚C) 2.
0±0.
2 5° 1.
1±0.
1 e ) Parameter Symbol Ratings Unit 2.
0 18.
6±0.
5 c type Collector to base voltage VCBO 1700 V n d stage.
tinued Collector to emitter voltage VCES 3.
3±0.
3 0.
7±0.
1 1700 V le n VCEO 600 V a elifecyc disco Emitter to base voltage VEBO 2.
0 5.
5±0.
3 5 V n u t ed, Peak collector current ICP 30 A roduc d typ Collector current IC 20 A te tin urP tinue Basecurrent IB 10 A fo on Collector power TC=25°C wing disc dissipation Ta=25°C PC 100 W 3.
5 in n follo ned Junction temperature des , pla Storage temperature Tj 150 ˚C Tstg –55 to +150 ˚C 5.
45±0.
3 5° 5.
45±0.
3 0.
7±0.
1 123 1:Base 2:Collector 3:Emitter TOP–3E Full Pack Package a co s tinued incalnuce type Electrical Characteristics (TC=25˚C) M is con inten Parameter Symbol ce/Dis pe, ma Collector cutoff current ICBO Dintenan nce ty Emitter cutoff current Ma tena Forward current transfer ratio ain Collector to emitter saturation voltage ed m Base to emitter saturation voltage (plan Transition frequency IEBO hFE VCE(sat) VBE(sat) fT Conditions VCB = 1000V, IE = 0 VCB = 1700V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 10A IC = 10A, IB = 2.
8A IC = 10A, IB = 2.
8A VCE = 10V, IC = 0.
1A, f = 0.
5MHz min typ max Unit 50 µA 1 mA 50 µA 7 14 3 V 1.
5 V 3 MHz Storage time Fall time tstg tf IC = 12A, IB1 = 2.
4A, IB2 = –4.
8A 4.
0 µs 0.
3 µs 1 Power Transistors 2SC5418 Collector power dissipation PC (W) Collector current IC (A) Collector current IC (A) 140 120 (1) 100 80 PC — Ta (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink.
(3) Without hea...


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