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C5419

Panasonic
Part Number C5419
Manufacturer Panasonic
Description Silicon NPN Transistor
Published Mar 2, 2021
Detailed Description Transistors 2SC5419 Silicon NPN triple diffusion planar type For low-frequency output amplification 6.9±0.1 0.7 4.0 U...
Datasheet PDF File C5419 PDF File

C5419
C5419


Overview
Transistors 2SC5419 Silicon NPN triple diffusion planar type For low-frequency output amplification 6.
9±0.
1 0.
7 4.
0 Unit: mm 2.
5±0.
1 (0.
8) (0.
5) (1.
0) (0.
2) 4.
5±0.
1 ■ Features • High collector-emitter voltage (Base open) VCEO • High transition frequency fT 0.
65 max.
(1.
0) 14.
5±0.
5 • Allowing supply with the radial taping ■ Absolute Maximum Ratings Ta = 25°C / Parameter Symbol Rating Unit e Collector-base voltage (Emitter open) VCBO 300 V pe) Collector-emitter voltage (Base open) VCEO 300 V nc d ge.
ed ty Emitter-base voltage (Collector open) VEBO 7 V sta tinu Collector current IC 70 mA a e cle con Peak collector current lifecy d, dis Collector power dissipation * ICP 100 mA PC 1 W n u duct type Junction temperature Tj 150 °C te tin Pro ed Storage temperature Tstg −55 to +150 °C four ntinu Note) *: Copper plate at the collector is more than 1 cm2 in area, 1.
7 mm in thickness 0.
45+–00.
.
0150 2.
5±0.
5 1.
05±0.
05 2.
5±0.
5 0.
45+–00.
.
0150 123 1: Emitter 2: Collector 3: Base MT-2-A1 Package in n s followliannged disco ■ Electrical Characteristics Ta = 25°C ± 3°C a o lude e, p Parameter Symbol Conditions Min Typ Max Unit inc typ Collector-emitter voltage (Base open) c tinued ance Emitter-base voltage (Collector open) M is con inten Collector-emitter cutoff current (Base open) /Dis ma Forward current transfer ratio * D ance type, Collector-emitter saturation voltage ten ce Transition frequency ain nan Collector output capacitance M inte (Common base, input open circuited) VCEO VEBO ICEO hFE VCE(sat) fT Cob IC = 100 µA, IB = 0 300 IE = 1 µA, IC = 0 7 VCE = 120 V, IB = 0 VCE = 10 V, IC = 5 mA 30 IC = 50 mA, IB = 5 mA VCB = 10 V, IE = −10 mA, f = 200 MHz 50 VCB = 10 V, IE = 0, f = 1 MHz V V 1 µA 220  1.
2 V MHz 10 pF d ma Note) 1.
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
(plane 2.
*: Rank classification Rank P Q R hFE 30 to 100 60 to 15...


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