TPCS8208
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (U-MOSIII)
TPCS8208
Lithium Ion Battery Applications
• Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 13 mΩ (typ.
) • High forward transfer admittance: |Yfs| = 15 S (typ.
) • Low leakage current: IDSS = 10 μA (max) (VDS = 20 V) • Enhancement mode: Vth = 0.
5~1.
2 V (VDS = 10 V, ID = 200 μA) • Common drain
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage
Drain current
DC Pulse
(Note 1) (Note 1)
Single-device
Drain power
operation (Note 3a)
dissipation
(t = 10 s)
Si...