TPCS8213
TOSHIBA Field Effect
Transistor Silicon N-Channel MOS Type (U-MOSⅣ)
TPCS8213
Lithium Ion Battery Applications
• Small footprint due to a small and thin package • Low drain-source ON-resistance: RDS (ON) = 8.
4 mΩ (typ.
) • High forward transfer admittance: |Yfs| = 13 S (typ.
) • Low leakage current: IDSS = 10 μA (max) (VDS = 20 V) • Enhancement-mode: Vth = 0.
5~1.
4 V (VDS = 10 V, ID = 200 μA) • Common drain
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage
Drain current
DC Pulse
(Note 1) (Note 1)
Drain power dissipation
Single-device operation (Note 3a)
(t = 10 s)
Sing...