Part Number
|
K4150 |
Manufacturer
|
Renesas Technology |
Description
|
2SK4150 |
Published
|
Jul 28, 2015 |
Detailed Description
|
2SK4150
Silicon N Channel MOS FET High Speed Power Switching
Features
Capable of 2.5 V gate drive Low drive current ...
|
Datasheet
|
K4150
|
Overview
2SK4150
Silicon N Channel MOS FET High Speed Power Switching
Features
Capable of 2.
5 V gate drive Low drive current Low on-resistance
RDS(on) = 4.
0 typ.
(at ID = 0.
2 A, VGS = 4 V, Ta = 25°C)
Outline
RENESAS Package code: PRSS0003DA-A (Package name: TO-92(1))
321
G
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation Channel to ambient thermal impedance Channel temperature Storage temperature Notes: 1.
PW 10 s, duty cycle 1%
Symbol
VDSS
VGSS
ID
ID
Note1 (pulse)
IDR
IDR
Note1 (pulse)
Pch
ch-a Tch
Tstg
Preli...
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