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50N06


Part Number 50N06
Manufacturer ETC
Title Low voltage high current power MOSFET
Description 50N06 * '6 72 Available RoHS* COMPLIANT ' * 6 VDS ID VGS PD TJ Tstg EAS 52.4 Ciss Coss Crss VDS=2v, V GS=0V,f=1.0MHZ VDS=2v,V GS=0V,...
Features st 6 (V) 8 10 102 101 175ඓ 25ඓ 100 0.2 0.4 4. 0.6 0.8 VSD ජ Notes : 1. VGS = 0V 2. 250த s Pulse Test 1.0 1.2 1.4 1.6 (V) 4000 3000 2000 1000 0 10-1 C oss C iss C rss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd ජ Notes : 1. VGS = 0 V 2. f = 1 MHz 100 VDS 5. 101 (V) ...

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50N024 : www.DataSheet4U.com SUD50N024-06P New Product Vishay Siliconix N-Channel 22-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) 24C FEATURES ID (A)d 80 64 rDS(on) (W) 0.006 @ VGS = 10 V 0.0095 @ VGS = 4.5 V D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized for High Efficiency APPLICATIONS D Synchronous Buck DC/DC Conversion - Desktop - Server D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD50N024-06P S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Pulse Voltage Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Current Continuous Source Current (Diode Conduction)a Av.

50N02409PU54A : www.DataSheet4U.com www.DataSheet4U.com SUD50N024-06P New Product Vishay Siliconix N-Channel 22-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) 24C FEATURES ID (A)d 80 64 rDS(on) (W) 0.006 @ VGS = 10 V 0.0095 @ VGS = 4.5 V D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized for High Efficiency APPLICATIONS D Synchronous Buck DC/DC Conversion - Desktop - Server D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD50N024-06P S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Pulse Voltage Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Current Continuous Source Current (D.

50N025-05P : New Product SUD50N025-05P Vishay Siliconix N-Channel 25-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 25 0.0052 @ VGS = 10 V 0.0076 @ VGS = 4.5 V ID (A)a, e 89 80 Qg (Typ) 30 nC TO-252 FEATURES D TrenchFETr Power MOSFET D 100% Rg Tested D RoHS Compliant APPLICATIONS D DC/DC Conversion, Low-Side − Desktop PC − Notebook PC D GDS Top View Drain Connected to Tab Ordering Information: SUD50N025-05P—E3 (Lead (Pb)-Free) G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current.

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50N03 : KIA SEMICONDUCTORS 50 Amps, 30 Volts N-CHANNEL MOSFET 1.Features  Advanced trench process technology  High density cell design for ultra low on-resistance  Fully characterized avalanche voltage and current 2.Applications  VDSS=30V,RDS(on)=6.5mΩ,ID=50A  Vds=30V  RDS(ON)=6.5mΩ(Max.),VGS@10V,Ids@30A  RDS(ON)=9.5mΩ(Max.),VGS@4.5V,Ids@30A 3. Pin configuration 50N03 Pin Function 1 Gate 2 Drain 3 Source 4 Drain 1 of 3 Rev 1.0 JAN 2014 KIA SEMICONDUCTORS N-CHANNEL ENHANCEMENT-MODE MOSFET 50N03 4. Maximum ratings and thermal characteristics Rating Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current1) Maximum power dissipation TA=25°C TA=75°C.

50N03 : The 50N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge . It can be used in a wide Vanety of applications . 50N03 VDS 30V RDS(ON) -- ID 50A GENERAL FEATURES � VDS = 30 V, ID = 50 A RDS(ON) 6.5 mΩ @ VGS = 10 V � High density cell design for ultra low Rdson � Fully characterized Avalanche voltage and current � Good stabilty and unifomity with high EAS � Excellent package for good heat dissipation � Special process technology for high ESD capability TO-252-2L top view Application � Power switching application � Hard Switched and High Frequency Circuits � Uninterruptible Power Supply Ordering Information PART NUMBER PACKAGE BRAND 50N03 .

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50N03LT : N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:• High frequency computer motherboard d.c. to d.c. converters • High current switching The PHP50N03LT is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB50N03LT is supplied in the SOT404 (D2PAK) surface mounting package. The PHD50N03LT is supplied in the SOT428 (DPAK)surface mounting package. PINNING PIN 1 2 3 tab DESCRIPTION gate drain 1 source SOT78 (TO220AB) tab SOT404 (D2PAK) tab SOT428 (DPAK) tab 2 1 23 2 1 3 1 3 drain LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDS.

50N04-07L : New Product SUD50N04-07L Vishay Siliconix N-Channel 40-V (D-S), 175 °C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 40 0.0074 at VGS = 10 V 0.0011 at VGS = 4.5 V ID (A)c 65 54 FEATURES • TrenchFET® Power MOSFETS • 175 °C Junction Temperature • Low Threshold Available RoHS* COMPLIANT TO-252 D GDS Top View Drain Connected to Tab Ordering Information: SUD50N04-07L SUD50N04-07L (Lead (Pb)-free) G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 100 °C ID Pulsed Drain Current IDM Avalanche Current IAS Single Avalanc.

50N06 : 50N06(F,B,H) 50A mps,60 Volts N-CHANNEL MOSFET FEATURE  50A,60V,RDS(ON)=16mΩ@VGS=10V/25A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 50N06 ITO-220AB 50N06F TO-263 50N06B TO-262 50N06H Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(Note1) Single Pulse Avalanche Energy (Note 2) Avalanche Current(Note1) Repetitive Avalanche Energy (Note1) Reverse Diode dV/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds VDSS VGSS ID IDM E.

50N06 : ·Drain Current ID= 50A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Fast Switching Speed ·APPLICATIONS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 60 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 50 A Ptot Total Dissipation@TC=25℃ 150 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 0.96 ℃/W 62.5 ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFacto.

50N06 : The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching mode power appliances.  FEATURES * RDS(ON) ≤ 23mΩ @ VGS=10V, ID=25A * Fast switching capability * 100% avalanche energy specified * Improved dv/dt capability  SYMBOL 2.Drain 1 1 1 TO-220 TO-220F 1 TO-220F1 TO-220F3 1 TO-263 1.Gate 3.Source  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 50N06L-TA3-T 50N06G-TA3-T TO-220 50N06L-TF1-T 50N06G-TF1-T TO-220F1 50N06L-TF3-T 50N06.

50N06 : The KIA50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching 2. Features RDS(ON)=23mΩ@VGS=10V. Ultra low gate charge (typical 30nC) Low reverse transfer capacitance Fast switching capability 100% avalanche energy specified Improved dv/dt capability 3. Pin configuration Pin 1 2 3 Function Gate Drain Source 1 of 9 Free Datasheet http://www.datasheet4u.com/ KIA 50 Amps, 60 Volts N-CHANNEL MOSFET 50N06 SEMICONDUCTORS 6. Absolute maximum ratings Parameter Drain to source .

50N06 : Shenzhen Tuofeng Semiconductor Technology Co., Ltd 50N06 Power-Transistor Features • For fast switching converters and sync. rectification • N-channel enhancement - normal level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max SMDversion ID 60 V 15 mΩ 50 A Type 50N06 50N06 2 Package Marking 1 3 TO-251 50N06 1 23 TO-252 50N06 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D TC =25 °C1) Pulsed drain current I D,pulse T C=25 °C2) Avalanche energy, single pulse E AS I D=50 A, R GS=25 Ω Reverse diode dv /dt dv /dt I D=50 A, V DS=48 V, di .

50N06-F : The UTC 50N06-F is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching mode power appliances.  FEATURES * RDS(ON) ≤ 23 mΩ @ VGS=10V, ID=25A * Fast switching capability * 100% avalanche energy specified * Improved dv/dt capability 1 TO-220 1 TO-251 1 TO-263 1 TO-252  SYMBOL 2.Drain 1.Gate 3.Source  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 50N06L-TA3-T 50N06G-TA3-T 50N06L-TM3-T 50N06G-TM3-T 50N06L-TN3-R 50N06G-TN3-R 50N06L-TQ2-T 50N06G-TQ2-T 50N06L.




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