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50N03

Tuofeng
Part Number 50N03
Manufacturer Tuofeng
Description Power Transistor
Published Jan 23, 2014
Detailed Description Shenzhen Tuofeng Semiconductor Technology Co., Ltd 50N03 Power-Transistor Features • Fast switching MOSFET for SMPS • Op...
Datasheet PDF File 50N03 PDF File

50N03
50N03

Overview
Shenzhen Tuofeng Semiconductor Technology Co.
, Ltd 50N03 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Avalanche rated • Pb-free plating; RoHS compliant Type 50N03 2 1 3 1) Product Summary V DS R DS(on),max ID 30 5 50 V mΩ A 50N03 1 2 3 Package Marking TO-252 50N03 TO-251 50N03 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=4.
5 V, T C=25 °C V GS=4.
5 V, T C=100 °C Pulsed drain current2) Avalanche current, single pulse 3) Avalanche energy, single pulse Reverse diode d v /dt Gate source voltage I D,pulse I AS E AS dv /dt V GS T C=25 °C T C=25 °C I D=35 A, R GS=25 Ω I D=50 A, V DS=24 V, di /dt =200 A/µs, T j,max=175 °C Value 50 50 50 50 350 50 60 6 ±20 mJ kV/µs V Unit A page 1 Free Datasheet http://www.
datasheet4u.
com/ Shenzhen Tuofeng Semiconductor Technology Co.
, Ltd 50N03 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 Symbol Conditions P tot T j, T stg T C=25 °C Value 68 -55 .
.
.
175 55/175/56 Unit W °C Parameter Symbol Conditions min.
Values typ.
max.
Unit Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm² cooling area 4) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=250 µA V DS=30 V, V GS=0 V, T j=25 °C V DS=30 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-source on-state resistance 5) - - 2.
2 75 50 K/W 30 1 - 0.
1 2.
2 1 V µA - 10 ...


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