Part Number
|
NTP5860N |
Manufacturer
|
ON Semiconductor |
Description
|
N-Channel Power MOSFET |
Published
|
Aug 21, 2015 |
Detailed Description
|
NTB5860N, NTP5860N, NVB5860N
N-Channel Power MOSFET
60 V, 220 A, 3.0 mW
Features
• Low RDS(on) • High Current Capabili...
|
Datasheet
|
NTP5860N
|
Overview
NTB5860N, NTP5860N, NVB5860N
N-Channel Power MOSFET
60 V, 220 A, 3.
0 mW
Features
• Low RDS(on) • High Current Capability
• 100% Avalanche Tested
• These Devices are Pb−Free, Halogen Free and are RoHS Compliant
• NVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Continuous Drain Current, RqJC
Steady State
TC = 25°C TC = 100°C
Power Dissipation, RqJC
Steady State
TC = 25°C
Pulsed Drain Current
tp = 10 ms
Current Limited by Package
Operating and Storage ...
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