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NTP5862N

ON Semiconductor
Part Number NTP5862N
Manufacturer ON Semiconductor
Description N-Channel Power MOSFET
Published Sep 10, 2015
Detailed Description NTD5862N, NTP5862N MOSFET – Power, N-Channel 60 V, 98 A, 5.7 mW Features • Low RDS(on) • High Current Capability • 100...
Datasheet PDF File NTP5862N PDF File

NTP5862N
NTP5862N

Overview
NTD5862N, NTP5862N MOSFET – Power, N-Channel 60 V, 98 A, 5.
7 mW Features • Low RDS(on) • High Current Capability • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 60 V Gate−to−Source Voltage − Continuous VGS ±20 V Gate−to−Source Voltage − Non−Repetitive (tp < 10 ms) VGS ±30 V Continuous Drain Current (RqJC) (Note 1) Power Dissipation (RqJC) TC = 25°C ID Steady TC = 100°C State TC = 25°C PD 98 A 69 115 W Pulsed Drain Current tp = 10 ms IDM 335 A Operating Junction and Storage Temperature TJ, Tstg −55 to °C 175 So...


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