CEM8208
Dual N-Channel Enhancement Mode Field Effect
Transistor
FEATURES
20V, 7A, RDS(ON) = 22mΩ @VGS = 4.
5V.
RDS(ON) = 32mΩ @VGS = 2.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
ESD Protected: 2000 V
D1 D1 D2 D2 8765
5
SO-8
1
1234 S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS 20
VGS ±12
Drain Current-Continuous Drain Current-Pulsed a
ID 7 IDM 25
Maximum Power Dissipation
PD 2.
0
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter The...