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CEM8208

Chino-Excel Technology
Part Number CEM8208
Manufacturer Chino-Excel Technology
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Published Sep 2, 2015
Detailed Description CEM8208 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 7A, RDS(ON) = 22mΩ @VGS = 4.5V. RDS(ON) =...
Datasheet PDF File CEM8208 PDF File

CEM8208
CEM8208

Overview
CEM8208 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 7A, RDS(ON) = 22mΩ @VGS = 4.
5V.
RDS(ON) = 32mΩ @VGS = 2.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
ESD Protected: 2000 V D1 D1 D2 D2 8765 5 SO-8 1 1234 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 20 VGS ±12 Drain Current-Continuous Drain Current-Pulsed a ID 7 IDM 25 Maximum Power Dissipation PD 2.
0 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 62.
5 Units V V A A W C Units C/W Details are subject to change without notice .
1 Rev 4.
2007.
Oct.
http://www.
cet-mos.
com CEM8208 Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Off Characteristics Drain-Source B...


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