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CEM8207

Chino-Excel Technology
Part Number CEM8207
Manufacturer Chino-Excel Technology
Description Dual N-Channel MOSFET
Published Sep 17, 2014
Detailed Description CEM8207 Feb. 2003 Dual N-Channel Enhancement Mode Field Effect Transistor 5 FEATURES 20V , 6A , RDS(ON)=20m Ω @VGS=4.5...
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CEM8207
CEM8207

Overview
CEM8207 Feb.
2003 Dual N-Channel Enhancement Mode Field Effect Transistor 5 FEATURES 20V , 6A , RDS(ON)=20m Ω @VGS=4.
5V.
RDS(ON)=30m Ω @VGS=2.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Surface Mount Package.
1 2 3 4 D1 8 D1 7 D2 6 D2 5 SO-8 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous a -Pulsed Drain-Source Diode Forward Current a Maximum Power Dissipation a Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 20 Unit V V A A A W C Ć12 Ć6 Ć24 6 2 -55 to 150 THERMAL CHARACTERISTICS...


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