Part Number
|
NTP5862N |
Manufacturer
|
ON Semiconductor |
Description
|
N-Channel Power MOSFET |
Published
|
Sep 10, 2015 |
Detailed Description
|
NTD5862N, NTP5862N
MOSFET – Power, N-Channel
60 V, 98 A, 5.7 mW
Features
• Low RDS(on) • High Current Capability • 100...
|
Datasheet
|
NTP5862N
|
Overview
NTD5862N, NTP5862N
MOSFET – Power, N-Channel
60 V, 98 A, 5.
7 mW
Features
• Low RDS(on) • High Current Capability • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
60
V
Gate−to−Source Voltage − Continuous
VGS
±20
V
Gate−to−Source Voltage − Non−Repetitive (tp 10 ms)
VGS
±30
V
Continuous Drain Current (RqJC) (Note 1)
Power Dissipation (RqJC)
TC = 25°C
ID
Steady TC = 100°C
State
TC = 25°C
PD
98
A
69
115
W
Pulsed Drain Current
tp = 10 ms
IDM
335
A
Operating Junction and Storage Temperature TJ, Tstg −55 to °C 175
So...
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