Part Number
|
RJK6026DPE |
Manufacturer
|
Renesas |
Description
|
Silicon N-Channel MOSFET |
Published
|
Oct 3, 2015 |
Detailed Description
|
RJK6026DPE
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance • Low leakage current • Hi...
|
Datasheet
|
RJK6026DPE
|
Overview
RJK6026DPE
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance • Low leakage current • High speed switching
Outline
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) )
4
123
G
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1%
2.
Value at Tc = 25°C 3.
STch = 25°C, Tch ≤ 150°C
Symbol
VDSS
VGSS
ID
ID
Note1 (pulse)
IDR
IDR
Note1 (pulse)...
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