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RJK6026DPE

Renesas
Part Number RJK6026DPE
Manufacturer Renesas
Description Silicon N-Channel MOSFET
Published Oct 3, 2015
Detailed Description RJK6026DPE Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • Low leakage current • Hi...
Datasheet PDF File RJK6026DPE PDF File

RJK6026DPE
RJK6026DPE

Overview
RJK6026DPE Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) 4 123 G Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at Tc = 25°C 3.
STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID Note1 (pulse) IDR IDR Note1 (pulse) IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg REJ03G1479-0100 Rev.
1.
00 Jul 02, 2009 D 1.
Gate 2.
Drain 3.
Source 4.
Drain S Ratings 600 ±30 5 20 5 20 4 0.
87 62.
5 2 150 –55 to +150 (Ta = 25°C) Unit V V A A A A A mJ W °C/W °C °C REJ03G1479-0100 Rev.
1.
00 Jul 02, 2009 Page 1 of 6 RJK6026DPE Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance V(BR)DSS 600 — — V ID = 10 mA, VGS = 0 IDSS — — 1 µA VDS = 600 V, VGS = 0 IGSS — — ±0.
1 µA VGS = ±30 V, VDS = 0 VGS(off) 3.
0 — 4.
5 V VDS = 10 V, ID = 1 mA RDS(on) — 2.
0 2.
4 Ω ID = 2.
5 A, VGS = 10 V Note4 Input capacitance Output capacitance Reverse transfer capacitance Ciss — 440 — pF VDS = 25 V Coss — 45 — pF VGS = 0 Crss — 6 — pF f = 1 MHz Turn-on delay time Rise time Turn-off delay time Fall time td(on) — 26 — ns ID = 2.
5 A tr — 18 — ns VGS = 10 V td(off) — 53 — ns RL = 120 Ω tf — 14 — ns Rg = 10 Ω Total gate charge Gate to source charge Gate to drain charge Qg — 14 — nC VDD = 480 V Qgs — 3 — nC VGS = 10 V Qgd — 7 — nC ID = 5 A Body-drain diode forward voltage VDF — 0.
9 1.
5 V IF = 5 A, VGS =...


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