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RJK6026DPP

Renesas Technology
Part Number RJK6026DPP
Manufacturer Renesas Technology
Description Silicon N Channel MOSFET High Speed Power Switching
Published Dec 17, 2009
Detailed Description RJK6026DPP Silicon N Channel MOS FET High Speed Power Switching REJ03G1592-0200 Rev.2.00 Jun 04, 2008 Features • Low on...
Datasheet PDF File RJK6026DPP PDF File

RJK6026DPP
RJK6026DPP

Overview
RJK6026DPP Silicon N Channel MOS FET High Speed Power Switching REJ03G1592-0200 Rev.
2.
00 Jun 04, 2008 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN) D G 1.
Gate 2.
Drain 3.
Source 1 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage www.
DataSheet4U.
com Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1.
2.
3.
4.
PW ≤ 10 µs, duty cycle ≤ 1% Value at Tc = 25°C STch = 25°C, Tch ≤ 150°C Limited by maximum safe operation area Symbol VDSS VGSS ID Note4 ID (pulse) Note1 IDR IDR (pulse) Note1 IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg Ratings 600 ±30 5 20 5 20 4 0.
87 28.
5 4.
38 150 –55 to +150 Unit V V A A A A A mJ W °C/W °C °C REJ03G1592-0200 Rev.
2.
00 Jun 04, 2008 Page 1 of 6 RJK6026DPP Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 5.
Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Min 600 — — 3.
0 — — — — — — — — — — — — — Typ — — — — 2.
0 440 45 6 26 18 53 14 14 3 7 0.
9 250 Max — 1 ±0.
1 4.
5 2.
4 — — — — — — — — — — 1.
5 — Unit V µA µA V Ω pF pF pF ns ns ns ns nC nC nC V ns Test conditions ID = 10 mA, VGS = 0 VDS = 600 V, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 2.
5 A, VGS = 10 V Note5 VDS = 25 V VGS = 0 f = 1 MHz ID = 2.
5 A VGS = 10 ...


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