Part Number
|
K2796 |
Manufacturer
|
Hitachi Semiconductor |
Description
|
2SK2796 |
Published
|
Oct 6, 2015 |
Detailed Description
|
2SK2796(L), 2SK2796(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS(on) = 0.12...
|
Datasheet
|
K2796
|
Overview
2SK2796(L), 2SK2796(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS(on) = 0.
12Ω typ.
• 4V gate drive devices.
• High speed switching
Outline
DPAK |1
D G
S
ADE-208-534C (Z) 4th.
Edition Jun 1998
44
12 3
12 3
1.
Gate 2.
Drain 3.
Source 4.
Drain
2SK2796(L), 2SK2796(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation
VDSS VGSS ID I Note1
D(pulse)
I DR I Note3
AP
E Note3 AR
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Note:
1.
PW ≤ 10µs, duty cycle ≤ 1 % ...
Similar Datasheet