CEM8958A
Dual Enhancement Mode Field Effect
Transistor (N and P Channel) PRELIMINARY
FEATURES
30V, 6.
8A, RDS(ON) = 28mΩ @VGS = 10V.
RDS(ON) = 42mΩ @VGS = 4.
5V.
-30V, -4.
8A, RDS(ON) = 60mΩ @VGS = -10V.
RDS(ON) = 85mΩ @VGS = -4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
Surface mount Package.
SOP-8
1
D1 D1 D2 D2 87 65
1234 S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
N-Channel
Drain-Source Voltage Gate-Source Voltage
VDS 30
VGS ±20
Drain Current-Continuous@TA= 25 C @TA= 70 C
Drain Current-Pulsed a
ID
6.
8 5.
4
IDM 27
P-Channel -30
±20
-4.
8 -3.
7...