Part Number
|
LN2306LT1G |
Manufacturer
|
LRC |
Description
|
30V N-Channel Enhancement-Mode MOSFET |
Published
|
Oct 17, 2015 |
Detailed Description
|
LESHAN RADIO COMPANY, LTD.
30V N-Channel Enhancement-Mode MOSFET
●APPLICATIONS 1)Advanced trench process technology 2)H...
|
Datasheet
|
LN2306LT1G
|
Overview
LESHAN RADIO COMPANY, LTD.
30V N-Channel Enhancement-Mode MOSFET
●APPLICATIONS 1)Advanced trench process technology 2)High Density Cell Design For Ultra Low On-Resistance 3)We declare that the material of product compliant with RoHS
requirements and Halogen Free.
●FEATURES
1)VDS= 30V 2)RDS(ON), Vgs@10V, Ids@5.
8A = 38m Ω 3)RDS(ON), Vgs@4.
5V, Ids@5.
0A = 43m Ω 4)RDS(ON), Vgs@2.
5V, Ids@4.
0A = 62m Ω
●DEVICE MARKING AND ORDERING INFORMATION
Device LN2306LT1G LN2306LT3G
Marking N06 N06
Shipping 3000/Tape&Reel 10000/Tape&Reel
LN2306LT1G
3
1 2
SOT– 23 (TO–236AB)
3D
G 1 S 2
●MAXIMUM RATINGS(Ta = 25℃)
Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current Pulsed Drai...
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