AO3422 N-Channel Enhancement Mode Field Effect
Transistor
General Description
The AO3422 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
It offers operation over a wide gate drive range from 2.
5V to 12V.
This device is suitable for use as a load switch.
Features
VDS (V) = 55V ID = 2.
1A (VGS = 4.
5V) RDS(ON) 160mΩ (VGS = 4.
5V) RDS(ON) 200mΩ (VGS = 2.
5V)
SOT23
Top View
Bottom View
DD
D
S G
G S
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID IDM
Power Dissipation
TA=25°C TA=70°C
PD
Junct...