ECH8315 Power MOSFET –30V, 25mΩ, –7.
5A, Single P-Channel This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to low on resistance.
This devices is suitable for applications with low on resistance requirements.
Features  Low On-Resistance  4V drive  ESD Diode-Protected Gate  Pb-Free, Halogen Free and RoHS compliance Typical Applications  Load Switch  Protection Switch for Lithium-ion Battery  Motor Driver SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1) Parameter Symbol Value Unit Drain to Source Voltage VDSS 30 V Gate to Source Voltage VGSS 20 V Drain Current (DC) ID 7.
5 A Drain Current (Pulse) PW  1...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)