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ECH8309

Sanyo Semicon Device
Part Number ECH8309
Manufacturer Sanyo Semicon Device
Description P-Channel Silicon MOSFET
Published Dec 28, 2011
Detailed Description www.DataSheet.co.kr Ordering number : ENA1418A ECH8309 SANYO Semiconductors DATA SHEET ECH8309 Features • • P-Chan...
Datasheet PDF File ECH8309 PDF File

ECH8309
ECH8309

Overview
www.
DataSheet.
co.
kr Ordering number : ENA1418A ECH8309 SANYO Semiconductors DATA SHEET ECH8309 Features • • P-Channel Silicon MOSFET General-Purpose Switching Device Applications 1.
8V drive.
Halogen free compliance.
Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.
8mm) Conditions Ratings --12 ±10 --9.
5 --40 1.
5 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Conditions ID=--1mA, VGS=0V VDS=--12V, VGS=0V VGS=±8V, VDS=0V VDS=--...


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