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ECH8306

Sanyo Semicon Device
Part Number ECH8306
Manufacturer Sanyo Semicon Device
Description P-Channel Silicon MOSFET
Published Oct 2, 2007
Detailed Description www.DataSheet4U.com Ordering number : ENA0302 ECH8306 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ECH8...
Datasheet PDF File ECH8306 PDF File

ECH8306
ECH8306

Overview
www.
DataSheet4U.
com Ordering number : ENA0302 ECH8306 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ECH8306 Features • • General-Purpose Switching Device Applications Low ON-resistance.
4V drive.
Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.
8mm) Conditions Ratings --100 ± 20 --2 --12 1.
6 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Sou...


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