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Part Number
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NTP5863N |
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Manufacturer
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ON Semiconductor |
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Description
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N-Channel Power MOSFET |
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Published
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Nov 7, 2015 |
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Detailed Description
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NTP5863N
N-Channel Power MOSFET
60 V, 97 A, 7.8 mW
Features
• Low RDS(on) • High Current Capability • 100% Avalanche T...
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Datasheet
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NTP5863N
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Overview
NTP5863N
N-Channel Power MOSFET
60 V, 97 A, 7.
8 mW
Features
• Low RDS(on) • High Current Capability • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Gate−to−Source Voltage − Nonrepetitive (TP 10 ms)
Continuous Drain Current
Steady State
TC = 25°C TC = 100°C
Power Dissipation
Steady TC = 25°C State
VDSS VGS VGS
ID
PD
60 $20 30
97 68 150
Pulsed Drain Current
tp = 10 ms
Operating and Storage Temperature Range
IDM TJ, Tstg
383 −55 to +175
Source Current (Body Diode) Single Pulse Drain−to−Source Ava...
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