IRF830
Power Field Effect
Transistor
N−Channel Enhancement Mode Silicon Gate TMOS
This TMOS Power FET is designed for high voltage, high speed power switching applications such as switching
regulators, converters, solenoid and relay drivers.
• Silicon Gate for Fast Switching Speeds • Low RDS(on) to Minimize On−Losses, Specified at Elevated
Temperature
• Rugged — SOA is Power Dissipation Limited • Source−to−Drain Diode Characterized for Use with Inductive Loads
MAXIMUM RATINGS
Rating
Drain−Source Voltage
Drain−Gate Voltage (RGS = 1.
0 MΩ) Gate−Source Voltage
Drain Current Continuous, TC = 25°C Continuous, TC = 100°C Peak, TC = 25°C
Total Power Dissipation @ TC = 25°C Derate above 25°C
Operat...