CEP02N65G/CEB02N65G CEF02N65G
N-Channel Enhancement Mode Field Effect
Transistor
FEATURES
Type CEP02N65G CEB02N65G CEF02N65G
VDSS 650V 650V
650V
RDS(ON) 5.
5Ω 5.
5Ω
5.
5Ω
ID @VGS 2A 10V 2A 10V 2A d 10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
D
DG
GS
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit TO-220/263 TO-220F
Drain-Source Voltage Gate-Source Voltage
VDS 650
VGS ±30
Drain Current-Continuous @ TC = 25 C @ TC = 100 C
Drain Current-Pulsed a
ID IDM e
2 2d 1 1d 8 8d
Maximum Po...