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CEP02N65G

CET
Part Number CEP02N65G
Manufacturer CET
Description N-Channel Enhancement Mode Field Effect Transistor
Published Jan 24, 2016
Detailed Description CEP02N65G/CEB02N65G CEF02N65G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP02N65G CEB02N65G CEF...
Datasheet PDF File CEP02N65G PDF File

CEP02N65G
CEP02N65G

Overview
CEP02N65G/CEB02N65G CEF02N65G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP02N65G CEB02N65G CEF02N65G VDSS 650V 650V 650V RDS(ON) 5.
5Ω 5.
5Ω 5.
5Ω ID @VGS 2A 10V 2A 10V 2A d 10V Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
D DG GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage VDS 650 VGS ±30 Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a ID IDM e 2 2d 1 1d 8 8d Maximum Power Dissipation @ TC = 25 C - Derate above 25 C 60 28 PD 0.
48 0.
22 Single Pulsed Avalanche Energy g Single Pulsed Avalanche Current g Operating and Store Temperature Range EAS IAS TJ,Tstg 11.
25 1.
5 -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resista...


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